| Zugriffsnummer | 23008 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs |
| Autor(in); Institution |
Fündling, Sönke; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Li, Shunfeng; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Sökmen, Ünsal; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Merzsch, Stephan; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Jahn, Uwe; Paul-Drude-Institut für Festkörperelektronik, Berlin, GERMANY
Trampert, Achim; Paul-Drude-Institut für Festkörperelektronik, Berlin, GERMANY
Riechert, Henning; Paul-Drude-Institut für Festkörperelektronik, Berlin, GERMANY
Peiner, Erwin; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Wehmann, Hergo-Heinrich; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Waag, Andreas; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
|
| Quelle/Jahr | Physica Status Solidi A: 206 (2009), 6, 1194 - 1198 |
| ISSN | 0031-8965 |
| DOI | |
| Verlag | Berlin: Wiley-VCH |
| Klassifikationscode | PACS: 61.46.-w ; PACS: 78.55.Cr ; PACS: 78.60.Hk ; PACS: 81.07.-b ; PACS: 81.15.Kk |
| Zusammenfassung | Three-dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN-based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silicon substrates with deep etched nanopillars to control the GaN nanorods growth by varying the size and distance of the Si pillars. The small footprint of GaN nanorods grown on Si pillars minimise the influence of the lattice mismatched substrate and improve the material quality. For the Si pillars an inductively coupled plasma dry-etching process at cryogenic temperature has been developed. An InGaN/GaN multi quantum well (MQW) structure has been incorporated into the GaN nanorods. We found GaN nanostructures grown on top of the silicon pillars with a pyramidal shape. This shape results from a competitive growth on different facets as well as from surface diffusion of the growth species. Spatially resolved optical properties of the structures are analysed by cathodoluminescence. Strongly spatial-dependent MQW emission spectra indicate the growth rate differences on top of the rods. |
Zitierung
Fündling, S., Li, S., Sökmen, Ü., Merzsch, S., Hinze, P., Weimann, T., Jahn, U., Trampert, A., Riechert, H., Peiner, E., Wehmann, H.-H., & Waag, A. (2009). Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs. Physica Status Solidi A, 206(6), 1194–1198. https://doi.org/10.1002/pssa.200880841