| Zugriffsnummer | 22941 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | SEM image contrast modeling for mask and wafer metrology |
| Autor(in); Institution |
Frase, Carl Georg; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Gnieser, Dominic; TU Braunschweig, Institut für Produktionsmesstechnik, Braunschweig, GERMANY
Johnsen, Klaus-Peter; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Häßler-Grohne, Wolfgang; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Tutsch, Rainer; TU Braunschweig, Institut für Produktionsmesstechnik, Braunschweig, GERMANY
Bosse, Harald; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
|
| Quelle/Jahr | EMLC 2009 : 25th European Mask and Lithography Conference ; lectures held at the GMM Conference, January 12 - 15, 2009 in Dresden, Germany:(2009) |
| Schriftenreihe | GMM-Fachbericht: 59 |
| Availability | [CD-ROM] ; file name: 23_Frase_SEM image contrast mo.pdf |
| Herausgeber(in) |
Behringer, Uwe
|
| ISBN | 978-3-8007-3154-1 |
| Verlag | Berlin [u.a.]: VDE-Verlag |
| Konferenzangaben | 25th European Mask and Lithography Conference, Dresden, 12-15, January, 2009, Germany |
| Freie Schlagworte | CD metrology ; CD-SEM ; linewidth metrology ; Monte Carlo simulation ; image contrast modeling |
| Zusammenfassung | Scanning electron microscopy (SEM) is widely used as a fast and high resolution measurement method capable to perform characterizations of the smallest isolated and dense features which are to be specified and produced on photomasks and wafers down to the 32 nm node and below. Furthermore, electron beam writing tools for mask or direct wafer patterning need electron beam based metrology capabilities for the required high precision alignment purposes. All of these applications benefit from a proper physical understanding of the electron interaction processes in the measured features of interest and suitable simulation capabilities in order to model the measured SEM image or signal contrasts. In this contribution we will report on a new Monte Carlo based modular simulation package, developed at the PTB and called MCSEM, which allows to model secondary as well as backscattered electron image contrasts on 3-dimensional object features. The fundamentals, basic features as well as first applications of the new simulation package MCSEM in the nanometrology field will be explained. Where appropriate, also other existing Monte Carlo based simulation packages still are in use at the PTB, examples and comparisons with the new MCSEM simulation will be given. |
