| Zugriffsnummer | 22694 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Nonlinearity of Ge- and InGaAs-photodiodes at high irradiance levels |
| Autor(in); Institution |
Lopez Ordonez, Marco Antonio; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Hofer, Helmuth; 4.5, Optische Technologien, PTB-Braunschweig
Kück, Stefan; 4.5, Optische Technologien, PTB-Braunschweig
|
| Quelle/Jahr | Proceedings of NEWRAD 2008 : 10th International Conference on New Developments and Applications in Optical Radiometry:(2008), 125 - 126 |
| Verlag | Daejeon: KRISS |
| Konferenzangaben | 10th International Conference on New Developments and Applications in Optical Radiometry, Daejeon, 13-16, October, 2008, Korea |
| Zusammenfassung | We present the nonlinearity of the responsivity of Ge- and InGaAs-photodiodes measured at high irradiance levels (up to ≈ 90 mW / mm²) in the near infrared. The nonlinearity was measured with two setups which use fiber optics and are based on the Differential Spectral Responsivty (DSR)- and "Relative"- method, respectively. The measurements were compared also with the nonlinearity measurements carried out with the classical flux-addition method. A good consistency of the measurements between the three methods was observed, which validates its compatibility. |
