| Zugriffsnummer | 21874 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Asymmetric double 2DEGs as a basis of quantum Hall resistance standards |
| Autor(in); Institution |
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Hein, Günter; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Bernhard H.; 2.1, Gleichstrom und Niederfrequenz, PTB-Braunschweig
Pesel, Eckart; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | 2008 Conference on Precision Electromagnetic Measurements digest:(2008), 18 - 19 |
| Herausgeber(in) |
Cookson, Alan H.
|
| ISBN | 978-1-424-42399-6 (print) ; 978-1-424-42400-9 (CD-ROM) |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | CPEM 2008, Conference on Precision Electromagnetic Measurements, Broomfield, Colorado, 08-13, July, 2008, USA |
| Freie Schlagworte | two-dimensional electron gas ; quantum resistance standards ; quantum Hall effect |
| Zusammenfassung | We study growth and magnetotransport properties of Ga(Al)As based asymmetric double two-dimensional electron gases (2DEG) consisting of a quantum well stacked on top of a heterojunction. We show that the electron densities of the two parallel 2DEG channels can be reliably matched by variation of a single growth parameter. Metrological quality of the resistance quantization of the two parallel quantum Hall channels at filling factor 2 is demonstrated. |
