| Zugriffsnummer | 21873 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Optically induced voltage pulses by resonant excitation of a passive GaAs photoconductive switch |
| Autor(in); Institution |
Loata, Gabriel C.; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Bieler, Mark; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Hein, Günter; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Siegner, Uwe; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Journal of the Optical Society of America B: 25 (2008), 8, 1261 - 1264 |
| ISSN | 0740-3224 |
| DOI | |
| URL | |
| Verlag | Washington, DC: Optical Society of America |
| Klassifikationscode | OCIS: 230.0250 ; OCIS: 320.7080 |
| Freie Schlagworte | Optical devices ; Optoelectronics ; Ultrafast optics ; Ultrafast devices |
| Zusammenfassung | We have investigated the all-optical generation of ultrashort voltage pulses that are launched by resonant excitation of a passive GaAs photoconductive switch with no electric bias field applied. Due to a specially designed geometry, we can distinguish between electrical transients generated in the Schottky field region of the metal/GaAs contact and shift currents resulting from nonlinear optical effects in the GaAs material. The shift current contribution is smaller than the Schottky field contribution but possesses a higher bandwidth with frequency components exceeding 1 THz. For small bias fields, the contribution of all-optically-generated currents to the overall voltage signal may be significant and needs to be accounted for when modeling photoconductive switches. |
