| Zugriffsnummer | 21787 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Robust single-parameter quantized charge pumping |
| Autor(in); Institution |
Kästner, Bernd; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Kashcheyevs, V.; University of Latvia, Institute for Solid State Physics, Riga, LATVIA
Hein, Günter; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Siegner, Uwe; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Applied Physics Letters: 92 (2008), 192106-1 - 192106-3 |
| ISSN | 0003-6951 |
| DOI | |
| Verlag | Melville, NY: AIP |
| Zusammenfassung | This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature, together with its simple configuration, makes this device a potential module for a scalable source of quantized current. |
