| Zugriffsnummer | 21153 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Explanation for the ac-dc voltage transfer differences in thin-film multijunction thermal converters on silicon chips at high frequencies |
| Autor(in); Institution |
Scarioni, Luciana; Universidad de Carabobo, Facultad de Ciencias y Tecnologia, Departamento de Física, Valencia, VENEZUELA
Klonz, Manfred; PTB-Braunschweig, retired staff
Keßler, Ernst; Institut für Physikalische Hochtechnologie e. V. (IPHT), Jena, GERMANY
|
| Quelle/Jahr | IEEE Transactions on Instrumentation and Measurement: 56 (2007), 2, 567 - 570 |
| ISSN | 0018-9456 |
| DOI | |
| Verlag | New York, NY: IEEE |
| Konferenzangaben | 2006 Conference on Precision Electromagnetic Measurements, Torino, 09-14, July, 2006, Italy |
| Freie Schlagworte | AC-DC voltage transfer ; Bond pads ; High frequency ; Silicon chip |
| Zusammenfassung | In this paper, an explanation for the ac-dc voltage transfer differences at frequencies greater than 100 kHz of the standard thin-film or planar multijunction thermal converter (PMJTC) developed at the Physikalisch-Technische Bundesanstalt and fabricated on a silicon chip has been found. The simulation indicates that the capacitance of the bond pads of the heater is the reason for an increase of the ac-dc voltage transfer difference of PMJTCs with higher heater resistance to negative values. Bond pads of smaller size and larger distance are shown to improve the frequency response. |
Zitierung
Scarioni, L., Klonz, M., & Keßler, E. (2007). Explanation for the ac-dc voltage transfer differences in thin-film multijunction thermal converters on silicon chips at high frequencies. IEEE Transactions on Instrumentation and Measurement, 56(2), 567–570. https://doi.org/10.1109/tim.2007.890798