| Zugriffsnummer | 20895 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Electrical properties of ZnO based nanostructures |
| Autor(in); Institution |
Schlenker, Eva; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Bakin, Andrey; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Wehmann, Hergo-Heinrich; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Mofor, Augustine Che; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Behrends, Arne; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Waag, Andreas; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
Melnikov, Alexander; Ruhr-Universität Bochum, Angewandte Festkörperphysik, Bochum, GERMANY
Wieck, Andreas D.; Ruhr-Universität Bochum, Angewandte Festkörperphysik, Bochum, GERMANY
|
| Quelle/Jahr | Journal of the Korean Physical Society: 53 (2008), 119 - 122 |
| ISSN | 0374-4884 |
| Verlag | Seoul: JKPS |
| Konferenzangaben | 13th International Conference on II-VI Compounds, Jeju, 10-14, September, 2007, Korea |
| Klassifikationscode | PACS: 73.61.Ga ; PACS: 73.63.-b ; PACS: 72.80.Ey ; PACS: 81.05.Dz |
| Freie Schlagworte | ZnO ; nanostructure ; Schottky diode ; Photoconduction |
| Zusammenfassung | Single ZnO nanowires grown by vapor phase transport were contacted by Ti/Au electrodes patterned by e-beam lithography. The current-voltage characteristics display a rectifying behavior, likely due to an interfacial insulating layer between metal and semiconductor. The contact resistance was determined to 60 MΩ, the deduced carrier concentration yields 1015cm-3 which is low and hints towards Fermi-level pinning at surface states. Spectrally resolved photoconduction measurements showed an increase in current only for illumination with above band gap light. Scanning electron micrographs of the metal-nanowire interface show a smearing of the electrodes, however, energy dispersive X-ray element maps could not reveal the elemental composition of the blurry regions. |
