Zugriffsnummer 20601
Dokumenttyp Zeitschriftenartikel
Sprache Englisch
Titel Relaxation and recombination in InAs quantum dots
Autor(in); Institution
Dawson, Philip; University of Manchester, School of Physics and Astronomy, Manchester, UK
Göbel, Ernst Otto; Präsidium, P, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Rubel, O.; Phillips-University Marburg, Faculty of Physics and Materials Science Center, Marburg, GERMANY
Baranovskii, S. D.; Phillips-University Marburg, Faculty of Physics and Materials Science Center, Marburg, GERMANY
Thomas, ; Phillips-University Marburg, Faculty of Physics and Materials Science Center, Marburg, GERMANY
Quelle/Jahr Physica Status Solidi B: 244 (2007), 8, 2803 - 2815
ISSN 0370-1972 (PRINT) ; 1521-3951 (ONLINE)
DOI
Verlag Weinheim: WILEY-VCH
Klassifikationscode PACS: 78.55.Cr ; PACS: 78.67.Hc ; PACS: 81.07.Ta ; PACS: 81.15.Hi
Zusammenfassung In this paper we discuss recent developments in the study of the temperature dependence of the optical properties of InAs/GaAs quantum dots and the mechanisms involved in the relaxation and recombination from InAs/AlAs quantum dots.

Zitierung

Dawson, P., Göbel, E. O., Pierz, K., Rubel, O., Baranovskii, S. D., & Thomas. (2007). Relaxation and recombination in InAs quantum dots. Physica Status Solidi B, 244(8), 2803–2815. https://doi.org/10.1002/pssb.200675602

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