Zugriffsnummer 20581
Dokumenttyp Konferenzartikel
Sprache Englisch
Titel Numerical analysis of DUV scatterometry on EUV masks
Autor(in); Institution
Wurm, Matthias; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Bodermann, Bernd; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Model, Regine; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Gross, Hermann; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Quelle/Jahr Modeling aspects in optical metrology:(2007), 661716-1 - 661716-12
Schriftenreihe Proceedings of SPIE: 6617
Herausgeber(in)
Bosse, Harald; 5.2, Längen- und Winkelteilungen, PTB-Braunschweig
Bodermann, Bernd; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
ISSN 0277-786X
ISBN 978-0-8194-6759-1
DOI
Verlag Bellingham, Wash.: SPIE
Konferenzangaben Modellng Aspects in Optical Metrology, Munich, 18-19, June, 2007, Germany
Freie Schlagworte scatterometry ; CD-metrology ; mask-metrology ; diffraction ; lithography ; critical dimension ; DUV ; EUV ; inverse problem
Zusammenfassung We investigated the potential, applicability, and advantages of DUV scatterometry including DUV ellipsometry for the dimensional characterisation of the absorber structures on EUV photomasks. By means of numerical investigations on the basis of rigorous diffraction calculations we demonstrate the sensitivity of DUV scatterometry with regard to dimensions and geometry of the absorber structures. Further we show, that in contrast to at-wavelength scatterometry in the EUV scatterometry in the DUV spectral range is nearly insensitive to perturbations of the reflecting MoSi multilayer. As for EUV scatterometry the separation of absorber structure and multilayer parameters is sometimes difficult the application of DUV scatterometry allows for an easy separation. It is further on verified, that for this reason a quite good reconstruction of geometry and size of the absorber structures from measured data is possible. Finally we prove the sensitivity of DUV ellipsometric measurements, a feature, which is not (yet) available in the EUV spectral range. Because of these results we estimate DUV scatterometry to be an excellent metrology method for in-line monitoring and process optimization in the fabrication process of EUV masks.

Zitierung

Wurm, M., Bodermann, B., Model, R., & Gross, H. (2007). Numerical analysis of DUV scatterometry on EUV masks. Modellng Aspects in Optical Metrology, Munich, 18-19, June, 2007, Germany. https://doi.org/10.1117/12.726072

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