| Zugriffsnummer | 19948 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Measurements of the electrical excitation of quantum Hall devices in the real-time domain |
| Autor(in); Institution |
Vasile, G.; Institut für Angewandte Physik, Braunschweig, GERMANY; National Institute of Research-Development for Cryogenics and Isotopic Technologies, Ramnicu Valcea, ROMANIA
Stellmach, Ch.; Institut für Angewandte Physik, Braunschweig, GERMANY
Hein, Günter; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Nachtwei, G.; Institut für Angewandte Physik, Braunschweig, GERMANY
|
| Quelle/Jahr | Semiconductor Science and Technology: 21 (2006), 1714 - 1719 |
| ISSN | 0268-1242 |
| DOI | |
| URL | |
| Verlag | Bristol: IOP |
| Zusammenfassung | In this study, we have investigated the time scale of the excitation of electrons leading to a transition from the quantum Hall (QH) state to the dissipative state in the two-dimensional electron system (2DES) of GaAs/AlGaAs heterostructures with Corbino geometry. The real-time-resolved measurements were performed by applying rectangular electrical pulses of 90 ns ≤ tp ≤ 180 ns pulse widths to the contacts of QH Corbino discs with various electron mobilities (0.1 × 106 cm2 V-1 s-1 ≤ μH ≤ 1.6 × 106 cm2 V-1 s-1) at the integer filling factor of ν = 2. The breakdown of the quantum Hall effect (QHE) occurs after a certain time (3 ns ≤ τexc ≤ 30 ns, τexc ≤ tp), which is a function of applied voltage (pulse amplitude), magnetic field, electron mobility and temperature. |
