| Zugriffsnummer | 19945 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Write windows of a ballistic bit addressing MRAM write operation |
| Autor(in); Institution |
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | IEEE Transactions on Magnetics: 42 (2006), 10, 2760 - 2762 |
| ISSN | 0018-9464 |
| DOI | |
| Verlag | New York, NY: IEEE |
| Zusammenfassung | The size of the write windows for ultrafast magnetic random access memory (MRAM) write operation based on ballistic bit addressing (BBA) is studied. During BBA the magnetization of a bit which is to be reversed undergoes a half precessional turn, whereas a bit which is not to be reversed undergoes a full precessional turn. After BBA pulse application the residual demagnetizing energy of the magnetic bit is low and magnetization ringing is suppressed. By single-spin simulations of the magnetization dynamics of an MRAM cell quasi-static and dynamic switching asteroids and maps of the residual energy after bit addressing are calculated. The results show a sufficient write margin allowing low-ringing ultrafast BBA MRAM write operation. |
