Zugriffsnummer 19558
Dokumenttyp Konferenzartikel in Zeitschrift
Peer Review unbekannt
Sprache Englisch
Titel X-ray spectrometry for wafer contamination analysis and speciation as well as for reference-free nanolayer characterization
Autor(in); Institution
Beckhoff, Burkhard; 7.1, Photonenradiometrie, PTB-Berlin
Fliegauf, Rolf; 7.1, Photonenradiometrie, PTB-Berlin
Kolbe, Michael; 7.1, Photonenradiometrie, PTB-Berlin
Müller, Matthias; 7.1, Photonenradiometrie, PTB-Berlin
Pollakowski, Beatrix; 7.1, Photonenradiometrie, PTB-Berlin
Weser, Jan; 7.1, Photonenradiometrie, PTB-Berlin
Ulm, Gerhard; 7.1, Photonenradiometrie, PTB-Berlin
Quelle/Jahr Proceedings of the Eight International Symposium on Ultra-Clean Processing of Silicon Surfaces: [held in Antwerp, Belgium, September 17 - 21, 2006]. Solid State Phenomena: 134 (2008), 277 - 280
ISSN 1012-0394
ISBN 3-908451-46-9
Verlag Uetikon: Trans Tech Publications
Konferenzangaben 8th International Symposium on Ultra Clean Processing of Semoconductor Surfaces, Antwerp, 17.-21.09. 2006, Belgium
Freie Schlagworte XRF ; TXRF ; GIXRF ; NEXAFS ; contamination analysis ; speciation ; nanolayer characterization ; synchrotron radiation
Zusammenfassung Monochromatized synchrotron radiation of the electron storage ring BESSY II in Berlin has been used for the non-destructive investigation of wafer surface contamination and nanolayered materials by X-ray spectrometry. For this purpose the fluorescence spectra of various samples have been recorded in different geometries: varying the incident angle from close to zero degrees, i.e. totalreflection geometry (T), over grazing incidence (GI) to conventional X-ray fluorescence (XRF). In TXRF geometry only the surface is analyzed, whereas GIXRF and XRF provide information from subsurface layers respectively the bulk of a sample.

Zitierung

Beckhoff, B., Fliegauf, R., Kolbe, M., Müller, M., Pollakowski, B., Weser, J., & Ulm, G. (2008). X-ray spectrometry for wafer contamination analysis and speciation as well as for reference-free nanolayer characterization. Solid State Phenomena, 134, 277–280.

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