| Zugriffsnummer | 19294 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Rigorous FEM-simulation of EUV-masks: influence of shape and material parameters |
| Autor(in); Institution |
Pomplun, J.; Zuse Institut, Berlin, GERMANY; JMCwave GmbH, Putzbrunn, GERMANY
Burger, S.; Zuse Institut, Berlin, GERMANY; JMCwave GmbH, Putzbrunn, GERMANY
Schmidt, F.; Zuse Institut, Berlin, GERMANY; JMCwave GmbH, Putzbrunn, GERMANY
Zschiedrich, L.; Zuse Institut, Berlin, GERMANY; JMCwave GmbH, Putzbrunn, GERMANY
Scholze, Frank; 7.1, Photonenradiometrie, PTB-Berlin
Laubis, Christian; 7.1, Photonenradiometrie, PTB-Berlin
Dersch, Uwe; Advanced Mask Technology Center, Dresden, GERMANY
|
| Quelle/Jahr | Photomask technology 2006 : 19 - 22 September 2006, Monterey, California, USA:(2006), 63493D |
| Schriftenreihe | Proceedings of SPIE: 6349 |
| ISBN | 978-0-8194-6444-6 ; 0-8194-6444-9 |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | 26th Annual BACUS Symposium on Photomask Technology, Monterey, 18-22, September, 2006, USA |
| Freie Schlagworte | Photomask simulation ; EUV lithography ; finite-element methods ; FEM |
| Zusammenfassung | We present rigorous simulations of EUV line masks with technological imperfections like side-wall angles and corner rounding. We perform an optimization of three different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. The values obtained from this optimization fit very well to experimental results obtained by quantitative microscopy. For the numerical simulations we use an adaptive finite element approach on irregular meshes [1]. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations [2]. The obtained results underline the necessity to model shape and material parameters in great detail. [1] S. Burger, R. Koehle, l. Zschiedrich, W. Gao, F. Schmidt, R. Maerz, C. Noelscher, Proc. SPIE Vol. 5955, 18-26 (2005) [2] L. Zschiedrich, S. Burger, A. Schaedle, F. Schmidt, Prof. Numerical Simulation of Optoelectronic Devices, 55-56 (2005) |
Zitierung
Pomplun, J., Burger, S., Schmidt, F., Zschiedrich, L., Scholze, F., Laubis, C., & Dersch, U. (2006). Rigorous FEM-simulation of EUV-masks: influence of shape and material parameters. 26th Annual BACUS Symposium on Photomask Technology, Monterey, 18-22, September, 2006, USA.