| Zugriffsnummer | 19014 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | CD characterization of nanostructures in SEM metrology |
| Autor(in); Institution |
Frase, Carl Georg; 5.2, Längen- und Winkelteilungen, PTB-Braunschweig
Buhr, Egbert; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Dirscherl, Kai; 5.2, Längen- und Winkelteilungen, PTB-Braunschweig
|
| Quelle/Jahr | Nanoscale metrology. Measurement Science and Technology: 18 (2007), 2, 510 - 519 |
| ISSN | 0957-0233 |
| DOI | |
| URL | |
| Verlag | Bristol: Institute of Physics (IOP) |
| Konferenzangaben | 7th Seminar on Quantitative Microscopy (QM) and 3rd Seminar on Nanoscale Calibration Standards and Methods, Nanoscale 2006, Bern-Wabern, 24-25, April, 2006, Switzerland |
| Freie Schlagworte | Critical dimension metrology ; SEM ; Monte Carlo simulation ; edge operator |
| Zusammenfassung | A new algorithm is presented that evaluates the critical dimension (CD) of nanostructures from scanning electron microscopy (SEM) images. The algorithm is based on the physical modelling of the SEM image formation and evaluates both top and bottom CD. The SEM intensity profile is modelled by a piecewise-defined continuous function which is approximated to the measured profile extracted from images by means of a least-square fit. The algorithm is tested in a series of Monte Carlo simulations with respect to a variation of the edge-slope angle and the electron probe diameter. The maximum deviation observed is smaller than 3 nm for both top and bottom CD. As an application example, CD measurements of silicon line structures are presented. |
