| Zugriffsnummer | 18924 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes |
| Autor(in); Institution |
Fuhrmann, D.; TU Braunschweig, Institute of Applied Physics, Braunschweig, GERMANY
Netzel, C.; TU Braunschweig, Institute of Applied Physics, Braunschweig, GERMANY
Rossow, U.; TU Braunschweig, Institute of Applied Physics, Braunschweig, GERMANY
Hangleiter, A.; TU Braunschweig, Institute of Applied Physics, Braunschweig, GERMANY
Ade, George; 2.4, Quantenelektronik, PTB-Braunschweig
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Applied Physics Letters: 88 (2006), 071105-1 - 071105-3 |
| ISSN | 0003-6951 |
| DOI | |
| Verlag | Melville, NY: AIP |
| Klassifikationscode | PACS: 85.60.Jb ; PACS: 85.35.Be |
| Zusammenfassung | We have optimized the internal quantum efficiency (IQE) of GaInN/GaN quantum-well (QW) structures. For an emission wavelength of 460 nm, a high IQE of 73% was achieved. For a longer emission wavelength, calculations predict higher oscillator strength for thinner QWs but higher In content. We observe an improvement in IQE of almost 50% when reducing the QW width from 2.7 nm to 1.8 nm, and increasing the In content for the whole blue to green spectral region with IQE=40% at 525 nm. The typical saturation of the output power with increasing current that occurs, particularly for green-light-emitting diodes, is extremely weak in our structures. |
