| Zugriffsnummer | 18874 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Prevention of MoSi multilayer reflection loss in EUVL tools |
| Autor(in); Institution |
Meiling, H.; ASML, Veldhoven, THE NETHERLANDS
Mertens, B.; TNO TPO, Delft, THE NETHERLANDS
Stietz, F.; Carl Zeiss, Oberkochen, GERMANY
Wedowski, Marco; Carl Zeiss, Oberkochen, GERMANY
Klein, Roman; 7.12, Röntgenradiometrie, PTB-Berlin
Kurt, R.; Philips Research Laboratories, Eindhoven, THE NETHERLANDS
Louis, E.; FOM-Institute Rijnhuizen, Nieuwegein, THE NETHERLANDS
Yakshin, A.; FOM-Institute Rijnhuizen, Nieuwegein, THE NETHERLANDS
|
| Quelle/Jahr | Soft X-ray and EUV imaging systems II:(2001), 93 - 104 |
| Schriftenreihe | Proceedings of SPIE: 4506 |
| Herausgeber(in) |
Tichenor, Daniel A.
|
| ISSN | 0277-786X |
| ISBN | 0-8194-4220-8 |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Conference on "Soft X-Ray and EUV Imaging Systems II", San Diego, Calif., 31, July - 01, August, 2001, USA |
| Freie Schlagworte | EUVL ; reflection loss ; contamination ; carbon growth ; oxisation ; MoSi mirrors ; mirror lifetime |
| Zusammenfassung | Extreme ultraviolet lithography requires vacuum conditions in the optical train. In order to maintain sufficient energy throughput, reflection reduction of multilayer mirrors due to contamination has to be minimised. We report on oxidation and carbonisation experiments on MoSi mirrors under exposure with EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be ~0.015 nm/h per mW/mm2 of EUV radiation under vacuum conditions that are typical for a high throughput EUVL system, i.e. 10-6 mbar H2. This oxidation can to a large extent be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A deposition rate of 0.25 nm/h was found when the hydrocarbon pressure of Fomblin was reduced to 10-9 mbar. We demonstrate that carbonisation can be suppressed by admitting oxygen during electron gun exposure. |
Zitierung
Meiling, H., Mertens, B., Stietz, F., Wedowski, M., Klein, R., Kurt, R., Louis, E., & Yakshin, A. (2001). Prevention of MoSi multilayer reflection loss in EUVL tools. SPIE Conference on "Soft X-Ray and EUV Imaging Systems II", San Diego, Calif., 31, July - 01, August, 2001, USA.