| Zugriffsnummer | 18400 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Scaling and inelastic scattering in the IQHE |
| Autor(in); Institution |
Brandes, Tobias; Universität Hamburg, Institut für Theoretische Physik, Hamburg, GERMANY
Schweitzer, Ludwig; 8.12, Theoretische Physik, PTB-Braunschweig
Kramer, Bernhard; Universität Hamburg, Institut für Theoretische Physik, Hamburg, GERMANY
|
| Quelle/Jahr | 22nd International Conference on the Physics of Semiconductors: 2 (1995), 987 - 990 |
| Herausgeber(in) |
Lockwood, David J.
|
| ISBN | 981-022979-8 |
| Verlag | Singapore [u.a.]: World Scientific |
| Konferenzangaben | 22th International Conference on the Physics of Semiconductors, Vancouver, 15-19, August, 1994, Canada |
| Zusammenfassung | The temperature exponent p of the inelastic scattering length lin ~ T-p/2 is calculated in second order perturbation theory for electron-phonon interaction. Taking into account the multifractal properties of the eigenstates at the center of a Landau band, the exponent for a narrow quantum well is found to be p = 2+η/2 in the range 1 K ≤ T ≤ 10 K in a deformation potential approximation. The additional quantity η ≈ 0.38 appearing in the exponent reflects the non-conventional correlations of the eigenstates. For piezo-electric coupling p = 2 is found at temperatures T ≤ 2 K. The temperature dependence of the energy loss rate for hot electrons is also calculated and the results are compared with experiments. |
