| Zugriffsnummer | 17802 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Ultrafast bit addressing in a magnetic memory matrix |
| Autor(in); Institution |
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Journal of Applied Physics: 98 (2005), 033910-1 - 033010-8 |
| ISSN | 0021-8979 |
| DOI | |
| URL | |
| Verlag | Melville, NY: American Institute of Physics |
| Freie Schlagworte | magnetic random access memories (MRAMs) ; subnanosecond field pulses ; magnetization precession of the free layer ; pulse parameters ; ballistic trajectories |
| Zusammenfassung | An ultrafast bit addressing scheme for magnetic random access memories (MRAMs) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by subnanosecond field pulses making use of the magnetization precession of the free layer. Single-spin simulations of the free-layer dynamics show that the pulse parameters for programming an arbitrary word of the array can be chosen, such that the magnetization of the cells to be written performs either a half or a full precessional turn during application of the programming pulse depending on the initial and final magnetization orientations of the addressed cells. Such bit addressing scheme leads to a suppression of the magnetization ringing in all cells of the memory array, thereby allowing ultrahigh MRAM write clock rates above 1 GHz. |
