| Zugriffsnummer | 17801 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Ballistic bit addressing in a magnetic memory cell array |
| Autor(in); Institution |
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Applied Physics Letters: 87 (2005), 042504-1 - 042504-3 |
| ISSN | 0003-6951 |
| DOI | |
| URL | |
| Verlag | Melville, NY: |
| Freie Schlagworte | magnetic random access memory (MRAM) ; half-select field pulses ; pulse parameters ; ballistic trajectories |
| Zusammenfassung | A ringing free bit addressing scheme for magnetic memories like magnetic random access memory [MRAM] is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch). With well adapted pulse parameters both full-select and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultrahigh MRAM clock rates. |
