| Zugriffsnummer | 17486 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Bias field dependence of current-induced precessional magnetization reversal |
| Autor(in); Institution |
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig; CNRS, Université Paris Sud, Paris, Institut d'Electronique Fondamentale, FRANCE
Chappert, C.; CNRS, Université Paris Sud, Paris, Institut d'Electronique Fondamentale, FRANCE
Devolder, T.; CNRS, Université Paris Sud, Paris, Institut d'Electronique Fondamentale, FRANCE
Sousa, R. C.; Instituto de Engenharia de Sistemas e Computadores, Lisboa, PORTUGAL
Freitas, P. P.; Instituto de Engenharia de Sistemas e Computadores, Lisboa, PORTUGAL
|
| Quelle/Jahr | Journal of Magnetism and Magnetic Materials: 286 (2005), 362 - 365 |
| ISSN | 0304-8853 |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | spin valve ; GMR ; precession ; current-induced switching ; ultra-fast dynamics |
| Zusammenfassung | Current-induced precessional magnetization reversal in microscopic spin valves is studied. The magnetization reversal is induced by ultra-short in-plane current pulses through the device. The resulting transverse Oerstedt field triggers precessional magnetization reversal of the free layer. Consecutive application of the same current pulse toggles the magnetization with every pulse. The bias field dependence of the switching properties reveals the clear characteristics of precessional switching. |
