| Zugriffsnummer | 15955 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | InAs/GaAs quantum dots as efficient free carrier deep traps |
| Autor(in); Institution |
Turchinovich, D.; Universität Freiburg, Abteilung für molekulare und optische Physik, Freiburg, GERMANY
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Jepsen, P. Uhd; Universität Freiburg, Abteilung für molekulare und optische Physik, Freiburg, GERMANY
|
| Quelle/Jahr | Physica Status Solidi C:(2003), 5, 1556 - 1559 |
| ISSN | 1610-1634 |
| DOI | |
| Verlag | Weinheim: Wiley-VCH |
| Konferenzangaben | Seventh International Workshop on Nonlinear Optics and Excitation in Semiconductors (NOEKS 7), Karlsruhe, February 24-28, 2003, Germany |
| Klassifikationscode | PACS: 78.47.+p ; PACS: 78.67.Hc |
| Freie Schlagworte | InAs/GaAs ; quantum dots ; THz ; Terahertz ; free carrier lifetime |
| Zusammenfassung | The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot structures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots. |
