| Zugriffsnummer | 15952 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density |
| Autor(in); Institution |
Ma, Zhixun; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Keyser, Ulrich-F.; Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
Haug, Rolf J.; Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
|
| Quelle/Jahr | Physica E: 17 (2003), 1-4, 117 - 119 |
| ISSN | 1386-9477 |
| Verlag | Amsterdam: North-Holland, Elsevier Science |
| Konferenzangaben | International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN), Toulouse, 22-26, July, 2002, France |
| Freie Schlagworte | Quantum dots ; InAs ; Photoluminescence |
| Zusammenfassung | We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs. |
