| Zugriffsnummer | 15950 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Photoluminescence and decay time measurements of InAs/AlAs quantum dots [poster] |
| Autor(in); Institution |
Dawson, Philip; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Göbel, Ernst Otto; Präsidium, P, PTB-Braunschweig
Ma, Zhixun; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
|
| Quelle/Jahr | Physics of semiconductors 2002 : proceedings of the 26th International Conference on the Physics of Semiconductors held in Edinburgh, UK, 29 July - 2 August 2002:(2003) |
| Schriftenreihe | Institute of Physics conference series: 171 |
| Availability | [CD-ROM] ; file name: P220.pdf |
| Herausgeber(in) |
Long, A. R.
|
| ISBN | 0-7503-0924-5 |
| Verlag | Bristol: Institute of Physics (IOP) Publishing |
| Konferenzangaben | 26th International Conference on the Physics of Semiconductors, Edinburgh, 29, July - 02, August 2002, UK |
| Freie Schlagworte | Quantum dots ; InAs ; Photoluminescence ; decay time |
| Zusammenfassung | In this paper we report on the low temperature photoluminescence spectra and decay time measurements of InAs/AlAs quantum dots. For a high excitation photon energy (2.41 eV) the spectrum consists of a broad feature (FWHM ≈ 70 meV) with a peak energy of 1.583 eV, as the detection energy is varied across the spectrum we observe photoluminescence decay times ≈ microseconds. The long decay times are attributed to recombination involving electrons and holes localised in spatially separated quantum dots. The spatial separation occurs during the relaxation process where electrons can scatter to adjacent quantum dots via the AlAs X states. As the excitation energy is progressively reduced we observe the appearance of a series of relatively sharp lines (FWHM ≈ 15 meV) which we attribute to resonant excitation and spatially direct recombination of a subset of the total ensemble of quantum dots. |
