| Zugriffsnummer | 15948 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Growth and photoluminescence studies of high quality self-organised InAs/AlAs quantum dots [poster] |
| Autor(in); Institution |
Ma, Zhixun; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Ahlers, Franz Josef; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Keyser, Ulrich-F.; Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
Haug, Rolf J.; Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
|
| Quelle/Jahr | Physics of semiconductors 2002 : proceedings of the 26th International Conference on the Physics of Semiconductors held in Edinburgh, UK, 29 July - 2 August 2002:(2003) |
| Schriftenreihe | Institute of Physics conference series: 171 |
| Availability | [CD-ROM] ; file name: P194.pdf |
| Herausgeber(in) |
Long, A. R.
|
| ISBN | 0-7503-0924-5 |
| Verlag | Bristol: Institute of Physics (IOP) Publishing |
| Konferenzangaben | 26th International Conference on the Physics of Semiconductors, Edinburgh, 29, July - 02, August 2002, UK |
| Freie Schlagworte | Quantum dots ; InAs ; Photoluminescence |
| Zusammenfassung | The morphologies of self-assembled InAs/AlAs quantum dots grown at various substrate temperatures and InAs coverage were studied by atomic force microscopy. The dot density displays a continuous decrease with increasing growth temperature from 480 to 540°C. For growth temperature below 500°C the dot density is nearly constant with increasing InAs coverage but it increases for temperatures above 500°C. These results are due to the increased diffusion of In adatoms at elevated growth temperatures. The low-temperature photoluminescence spectra of buried InAs/AlAs dots were also investigated. The red shift of the emission peak with increasing InAs coverage is due to the increase in quantum dot volume, while the blue shift of peak energy with increasing growth temperature is attributed especially for higher growth temperatures to the intermixing of AlAs with the InAs. |
Zitierung
Ma, Z., Pierz, K., Ahlers, F. J., Keyser, U.-F., & Haug, R. J. (2003). Growth and photoluminescence studies of high quality self-organised InAs/AlAs quantum dots [poster]. 26th International Conference on the Physics of Semiconductors, Edinburgh, 29, July - 02, August 2002, UK.