| Zugriffsnummer | 15946 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures |
| Autor(in); Institution |
Gottwaldt, Lars; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Ahlers, Franz Josef; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Göbel, Ernst Otto; Präsidium, P, PTB-Braunschweig
Nau, S.; Philipps-University Marburg, Materials Science Center and Department of Physics, Marburg, GERMANY
Torunski, T.; Philipps-University Marburg, Materials Science Center and Department of Physics, Marburg, GERMANY
Stolz, W.; Philipps-University Marburg, Materials Science Center and Department of Physics, Marburg, GERMANY
|
| Quelle/Jahr | Journal of Applied Physics: 94 (2003), 4, 2464 - 2472 |
| ISSN | 0021-8979 |
| Verlag | Melville, NY: American Institute of Physics |
| Freie Schlagworte | Interface morphology ; Heterostructure ; QHE ; PL ; PLE |
| Zusammenfassung | We have investigated the influence of interface roughness in GaAs/AlGaAs heterostructures on both the optical and the electronic properties by varying systematically the two growth parameters substrate temperature and growth interruption. We prove that the optimization of samples for optics and transport, respectively, requires different growth parameters. Whereas the optical properties are exclusively determined by the roughness of the two quantum well interfaces, the transport properties are additionally influenced by the ionized impurity scattering. The number of impurities increases during growth interruption and consequently, in contrast to the optical samples, an optimisation of the growth parameters is not as straight forward since it depends on the background impurities originating from the UHV system. A direct correlation with information obtained from AFM-images is therefore only possible for the optical properties. At growth temperatures higher than 620°C in addition to the usual terrace structure a mesoscopic island structure appears and dominates the exciton luminescence linewidth. |
