| Zugriffsnummer | 15501 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Sub-nm topography measurement by deflectrometry: Flatness standard and wafer nanotopography |
| Autor(in); Institution |
Geckeler, Ralf D.; 4.21, Bildoptik und Spektrometrie, PTB-Braunschweig
Weingärtner, Ingolf; 4.21, Bildoptik und Spektrometrie, PTB-Braunschweig
|
| Quelle/Jahr | Proceedings of the 3rd International Conference [and 4th General Meeting of the] European Society for Precision Engineering and Nanotechnology. Vol. 2:(2002), 497 - 500 |
| ISBN | 90-386-2883-8 |
| Verlag | Eindhoven: Universiteitsdr. TU Eindhoven |
| Konferenzangaben | 3rd International Conference and 4th General Meeting of the european society for precision engineering and nanotechnology, Eindhoven, 26-30, May, 2002, The Netherlands |
| Zusammenfassung | For the ultra-precise and traceable measurement of slope and topography of large near-flat and slightly curved optical surfaces, a novel scanning facility based on ESAD (Extended Shear Angle Difference) deflectometry has been developed. An uncertainty of the topography in the sub-nanometer range can be attained, as the ESAD principle minimizes error influences and allows a highly precise calibration of the angle measuring device. ESAD scanning does not rely on external reference surfaces of matched topography. The measurands are directly traceable to the SI units of angle and length. A primary application of the facility is to establish the improved standard for flatness and straightness of PTB. Another goal is to enable the ultra-precise measurement of the nanotopography of large wafers. |
Zitierung
Geckeler, R. D. & Weingärtner, I. (2002). Sub-nm topography measurement by deflectrometry: Flatness standard and wafer nanotopography. 3rd International Conference and 4th General Meeting of the european society for precision engineering and nanotechnology, Eindhoven, 26-30, May, 2002, The Netherlands.