Zugriffsnummer 15095
Dokumenttyp Konferenzartikel in Zeitschrift
Sprache Englisch
Titel Precise measurement of neutron scattering cross sections on silicon at energies between 8 and 14 MeV
Autor(in); Institution
Schmidt, Dankwart; 6.401, Neutronenwirkungsquerschnitte, PTB-Braunschweig
Mannhart, Wolf; 6.401, Neutronenwirkungsquerschnitte, PTB-Braunschweig
Quelle/Jahr Journal of Nuclear Science and Technology:(2002), Suppl. 2, Pt. 1, 226 - 229
Herausgeber(in)
Shibata, K.; Japan Atomic Energy Research Institute, Tokai-mura, JAPAN
ISSN 0022-3131
Verlag Tokyo: Atomic Energy Society of Japan
Konferenzangaben International Conference on Nuclear Data for Science and Technology ; ND 2001, Tsukuba, 7-12, October, 2001, Japan
Freie Schlagworte neutron scattering cross sections ; natural silicon ; energy range 8 to 14 MeV ; Monte Carlo simulation
Zusammenfassung Fast neutron scattering cross sections were measured in the energy range between 7.89 MeV and 13.85 MeV using a sample of natural silicon in time-of-flight experiments. Besides the elastic cross sections which are the elemental ones, inelastic partial cross sections of 28Si were measured at excitation energies of up to 7.415 MeV. High accuracy of the measured differential data was achieved by complete Monte Carlo simulation of neutron source, sample interaction and detector properties. Differential cross sections (> 10 mb/sr) are affected by typical uncertainties below 5 % whereas the uncertainties of angle-integrated cross sections amount to 2%.

Zitierung

Schmidt, D. & Mannhart, W. (2002). Precise measurement of neutron scattering cross sections on silicon at energies between 8 and 14 MeV. Journal of Nuclear Science and Technology, 226–229.

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