| Zugriffsnummer | 15052 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | TXRF analysis of low Z elements and TXRF-NEXAFS speciation of organic contaminants on silicon wafer surfaces excited by monochromatized undulator radiation |
| Autor(in); Institution |
Beckhoff, Burkhard; 7.12, Röntgenradiometrie, PTB-Berlin
Fliegauf, Rolf; 7.12, Röntgenradiometrie, PTB-Berlin
Ulm, Gerhard; 7.1, Photonenradiometrie, PTB-Berlin
Weser, Jan; 7.12, Röntgenradiometrie, PTB-Berlin
Pepponi, G.; Atominstitut der Österreichischen Universitäten, Wien, AUSTRIA
Streli, C.; Atominstitut der Österreichischen Universitäten, Wien, AUSTRIA
Wobrauschek, P.; Atominstitut der Österreichischen Universitäten, Wien, AUSTRIA
Ehmann, T.; Wacker Siltronic AG, Burghausen, GERMANY
Fabry, L.; Wacker Siltronic AG, Burghausen, GERMANY
Pahlke, S.; Wacker Siltronic AG, Burghausen, GERMANY
Kanngießer, B.; Techn. Univ. Berlin, Inst. für Atomare Physik und Fachdidaktik, Berlin, GERMANY
Malzer, W.; Techn. Univ. Berlin, Inst. für Atomare Physik und Fachdidaktik, Berlin, GERMANY
|
| Quelle/Jahr | Sixth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2002):(2003), 5 S. |
| Availability | [CD-ROM] ; file name: pag165TXRFAnalysis.pdf |
| Konferenzangaben | Sixth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2002), Oostende, 16-18, September, 2002, Belgien |
| Freie Schlagworte | TXRF ; NEXAFS ; light elements ; organic contaminants ; speciation ; synchrotron |
| Zusammenfassung | Total reflection X-ray fluorescence analysis (TXRF) using monochromatized undulator radiation from the synchrotron radiation facility BESSY II has been employed to investigate light element impurities on silicon wafer surfaces. Dedicated droplet samples on silicon wafer surfaces were prepared and for the TXRF arrangements employed lower limits of detection (LOD) for C, N, Na, Mg and Al ranging from 0.3 pg to 1.3 pg. Calculated vapor phase decomposition (VPD) detection limits, derived from the assumption that the sample droplet would have been collected from a 200 mm wafer, range from 2·107 atoms / cm2 to about 108 atoms / cm2 for Na, Mg and Al. Using a thin window Si(Li) detector, the resonant Raman scattering effect limiting the LOD of Al at trace levels was studied and an initial LOD value for B was found to be 7 ng. In addition, a TXRF investigation of only a few nm thick C-Ni-C structure deposited on a wafer could be performed. In a near edge X-ray absorption fine structure (NEXAFS) investigation in conjunction with TXRF analysis several organic contaminants on silicon wafer surfaces were studied with respect to their speciation. |
Zitierung
Beckhoff, B., Fliegauf, R., Ulm, G., Weser, J., Pepponi, G., Streli, C., Wobrauschek, P., Ehmann, T., Fabry, L., Pahlke, S., Kanngießer, B., & Malzer, W. (2003). TXRF analysis of low Z elements and TXRF-NEXAFS speciation of organic contaminants on silicon wafer surfaces excited by monochromatized undulator radiation. Sixth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2002), Oostende, 16-18, September, 2002, Belgien.