| Zugriffsnummer | 14948 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Microsecond carrier recombination times in InAs/AlAs quantum dots |
| Autor(in); Institution |
Dawson, Phil; 2.41, Halbleiterstrukturen, PTB-Braunschweig; UMIST, Physics Department, Manchester, UK
Ma, Zhixun; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Göbel, Ernst Otto; Präsidium, P, PTB-Braunschweig
|
| Quelle/Jahr | Applied Physics Letters: 81 (2002), 13, 2349 - 2351 |
| ISSN | 0003-6951 |
| DOI | |
| Klassifikationscode | PACS: 73.63.kv ; PACS: 78.67.Hc ; PACS: 78.55.Cr ; PACS: 73.50.Gr |
| Freie Schlagworte | self-assembled ; Quantum dots ; InAs/AlAs ; photoluminescence ; time resolved |
| Zusammenfassung | We report the measurement of microsecond decay times of the photoluminescence from self-assembled InAs/AlAs quantum dots. The long decay times are attributed to recombination involving electrons and holes localized in spatially separated quantum dots. The spatial separation occurs during the relaxation proces where electrons can scatter to adjacent quantum dots via the AlAs X states. |
