| Zugriffsnummer | 14643 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Carrier thermalization and activation within self-assembled InAs /AlAs quantum dot states |
| Autor(in); Institution |
Ma, Zhixun; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
|
| Quelle/Jahr | Surface Science: 511 (2002), 57 - 64 |
| ISSN | 0039-6028 |
| Verlag | Amsterdam: North-Holland, Elsevier Science |
| Freie Schlagworte | Self-assembled dots ; InAs ; quantum dots |
| Zusammenfassung | The carrier transfer and activation process among lateral coupled InAs/AlAs quantum dots (QDs) are investigated based on the analysis of excitation power and temperature dependence of photoluminescence. An unusual red-shift of ground-state emissions, accompanied by a shrinkage of its line width, with increasing power density, is observed. It is explained by scattering and tunnelling of carriers, which result in a preferential capture of carriers into lateral coupled QDs and recombination from the lowest energy levels. The temperature-induced red-shift of the photon emissions from ground and excited states are attributed to the thermal activation and redistribution among these QD states. |
