| Zugriffsnummer | 14435 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Metallic single-electron transistor without traditional tunnel barriers |
| Autor(in); Institution |
Krupenin, Vladimir A.; Moscow State University, Laboratory of Cryoelectronics, Moscow, RUSSIAN FEDERATION
Zorin, Alexander B.; 2.42, Metallische Strukturen, PTB-Braunschweig; Moscow State University, Institute of Nuclear Physics, Moscow, RUSSIAN FEDERATION
Presnov, Denis E.; Moscow State University, Institute of Nuclear Physics, Moscow, RUSSIAN FEDERATION
Savvateev, Michael N.; Moscow State University, Laboratory of Cryoelectronics, Moscow, RUSSIAN FEDERATION
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Uspechi Fiziceskich Nauk: 171 (2001), 10, Suppl., 113 - 116 |
| ISSN | 0042-1294 |
| Verlag | Moskva [u.a.]: Nauka |
| Freie Schlagworte | Coulomb blockade ; Electron tunneling ; Diffusive electron transport |
| Zusammenfassung | We report a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (1μm-long) connecting a 1μm-long Al island to two Al outer electrodes. These resistors substitute small-area oxide tunnel junctions of traditional SET. Our transistor with total asymptotic resistance of 110 kΩ demonstrated very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages Vg. |
