| Zugriffsnummer | 14229 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Four-angle evaporation method for the preparation of single electron tunneling devices |
| Autor(in); Institution |
Weimann, Thomas; 2.404, Nanostrukturen für technische Anwendungen, PTB-Braunschweig
Scherer, Hansjörg; 2.42, Metallische Strukturen, PTB-Braunschweig
Krupenin, V. A.; Moscow State University, Laboratory of Cryoelectronics, Moscow, RUSSIA
Müller, Franz; 2.42, Metallische Strukturen, PTB-Braunschweig
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Microelectronic Engineering: 57-58 (2001), 915 - 918 |
| ISSN | 0167-9317 |
| Freie Schlagworte | Single electron tunneling ; E-beam lithography |
| Zusammenfassung | With a view to improving the performance of single electron tunneling (SET) devices, it is desirable to minimize the charge island dimensions. This would allow higher operating temperatures to be achieved by a reduction of the island capacitance and the background charge noise to be reduced by minimization of the contact area between island and substrate. In this paper, a new fabrication method is presented, which combines a four-angle evaporation method with a dry etching process and allows SET devices to be prepared with self-aligned positioning of a small island. |
