| Zugriffsnummer | 13849 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Strong influence of in-plane magnetic fields on the cyclotron effective electron mass at the GaAs/Al0.3Ga0.7As heterojunction |
| Autor(in); Institution |
Schneider, Detlef; TU Braunschweig, Institut für Technische Physik und Hochmagnetfeldanlage, Braunschweig, GERMANY
Klaffs, Torsten; TU Braunschweig, Institut für Technische Physik und Hochmagnetfeldanlage, Braunschweig, GERMANY
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Ahlers, Franz Josef; 2.41, Halbleiterstrukturen, PTB-Braunschweig
|
| Quelle/Jahr | Fourteenth International Conference on High Magnetic Fields in Semiconductor Physics. Physica B: 298 (2001), 1-4, 234 - 238 |
| ISSN | 0921-4526 |
| DOI | |
| Verlag | Amsterdam [u.a.]: North-Holland, Elsevier Science |
| Konferenzangaben | Fourteenth International Conference on High Magnetic Fields in Semiconductor Physics ; SemiMag 2000, Matsue, 24-29, September, 2000, Japan |
| Freie Schlagworte | magnetotransport ; 2 DEG ; cyclotron effective mass ; GaAs/AlGaAs |
| Zusammenfassung | An in-plane magnetic field B ∥, added to a perpendicular one B ⊥, and applied to the quasi-two-dimensional electron gas at the GaAs/AlGaAs heterojunction, may increase the cyclotron effective mass mc* due to the distortion of the Fermi contour by B ∥. We study the increase of mc*(B ∥) by the Shubnikov-de Haas effect, for the first time for five different ratios B ∥/B ⊥, ranging from 1.5 to 13 (compared to the one ratio of 6.0 in an earlier investigation). The observed field dependence extends from mc* = 0.067 m0 for B ∥ = 0 T to mc* = 0.1 m0 for B ∥ = 13 T. This drastic increase of mc*(B ∥) of 50 % is caused not only by the higher applied in-plane field, but rather by the stronger field dependence of the carriers with a density of n = 1.7 x 1011 cm-2. We discuss our results, also in view of spin splitting and magnetophonon resonance measurements in tilted magnetic fields. |
