| Zugriffsnummer | 13658 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Development of highly integrated RSFQ circuits on the basis of intrinsically shunted Josephson junctions |
| Autor(in); Institution |
Buchholz, Friedrich-Immanuel; 2.402, RSFQ-Logikschaltungen, PTB-Braunschweig
Balashov, Dimitry V.; 2.402, RSFQ-Logikschaltungen, PTB-Braunschweig
Khabipov, Marat I.; 2.402, RSFQ-Logikschaltungen, PTB-Braunschweig
Hagedorn, Daniel; 2.402, RSFQ-Logikschaltungen, PTB-Braunschweig
Dolata, Ralf; 2.42, Metallische Strukturen, PTB-Braunschweig
Pöpel, Ralf; 2.42, Metallische Strukturen, PTB-Braunschweig
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Physica C: 350 (2001), 291 - 301 |
| ISSN | 0921-4534 |
| Freie Schlagworte | Josephson effect ; RSFQ circuits ; superconducting digital electronics |
| Zusammenfassung | At PTB, for application in RSFQ and voltage standard circuits, the development of highly integrated SDE circuits is focused on devices based on intrinsically shunted Josephson junctions in the SINIS and SNS technologies. In SINIS technology, the fabrication process has been optimized to values of the critical current density of jc = 500 A/cm2 and the characteristic voltage of Vc = 190 μV. To raise the circuit integration level, successive steps of development are shown by the example of the layout of an elementary RSFQ cell designed for higher values of jc. In SNS technology, a fabrication process has been developed to produce small ramp-type junctions with contact areas smaller than 0.4 μm2 and with values for jc and Vc of about jc = 200 kA/cm2 and Vc = 20μV. The design allows the SNS junction size to be further reduced down to the deep sub-micron range. Work partly supported by the Deutsche Forschungsgemeinschaft (DFG), Germany (proj. No. NI 253/3-1), the Bundesministerium für Bildung und Forschung (BMBF), Germany (proj. Nos. 13N6835, 13N7259, 13N7494), the European Union (proj. No. SMT4-CT98-2239), the Russian SSP "Superconductivity", ISTC (proj. No. 1199), and INTAS (proj. No. 97-1712). |
