| Zugriffsnummer | 13564 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Optimization of QHE-devices for metrological applications |
| Autor(in); Institution |
Jeckelmann, Beat; Swiss Federal Office of Metrology, Bern-Wabern, SWITZERLAND
Rüfenacht, Alain; Swiss Federal Office of Metrology, Bern-Wabern, SWITZERLAND
Jeanneret, Blaise; Swiss Federal Office of Metrology, Bern-Wabern, SWITZERLAND
Overney, Frederic; Swiss Federal Office of Metrology, Bern-Wabern, SWITZERLAND
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Campenhausen, Aurel von; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Hein, Günter; 2.41, Halbleiterstrukturen, PTB-Braunschweig
|
| Quelle/Jahr | IEEE Transactions on Instrumentation and Measurement: 50 (2001), 2, 218 - 222 |
| ISSN | 0018-9456 |
| Verlag | New York, NY: IEEE |
| Konferenzangaben | Conference on Precision Electromagnetic Measurements ; CPEM 2000, Sydney, 14-19, May, 2000, Australia |
| Freie Schlagworte | Electrical quantum standards ; integer quantum Hall effect ; two-dimensional electron system |
| Zusammenfassung | In the framework of an European project aiming at the realization of a system for the calibration of capacitance standards based on the Quantum Hall effect (QHE), optimized QHE devices for the metrological applications as dc as well as ac standards of resistance are developed. The present paper describes the dc characterisation of a large number of devices with different layouts, contact configurations, carrier concentrations, and mobilities. The results demonstrate the influence of the device parameters on the critical current, the width of the quantized Hall resistance. Recommendations are given for the layout and mobility of QHE devices in view of their use as dc standards of resistance. |
