The highly isotopic enriched (99,9 %), high-pure 28Si single crystal

Bulanov, A. D.; Devyatych, G. G.; Gusev, A. V.; Sennikov, P. G.; Pohl, H.-J.; Riemann, H.; Schilling, H.; Becker, Peter

Zugriffsnummer	12922
Dokumenttyp	Zeitschriftenartikel
Sprache	Englisch
Titel	The highly isotopic enriched (99,9 %), high-pure ²⁸Si single crystal
Autor(in); Institution	Bulanov, A. D.; Institute of Chemistry of High-Pure Substances RAS (IChHPS), Nizhny Novogorod, RUSSIAN FEDERATION Devyatych, G. G.; Institute of Chemistry of High-Pure Substances RAS (IChHPS), Nizhny Novogorod, RUSSIAN FEDERATION Gusev, A. V.; Institute of Chemistry of High-Pure Substances RAS (IChHPS), Nizhny Novogorod, RUSSIAN FEDERATION Sennikov, P. G.; Institute of Chemistry of High-Pure Substances RAS (IChHPS), Nizhny Novogorod, RUSSIAN FEDERATION Pohl, H.-J.; VITCON Projectconsult GmbH, Jena, GERMANY Riemann, H.; Institut für Kristallzüchtung (IKZ), Berlin, GERMANY Schilling, H.; Institut für Kristallzüchtung (IKZ), Berlin, GERMANY Becker, Peter; Q.201, Avogadro, PTB-Braunschweig
Quelle/Jahr	Crystal Research and Technology: 35 (2000), 9, 1023 - 1026
ISSN	0232-1300
Verlag	Weinheim: Wiley-VCH
Freie Schlagworte	Si ; isotope ; monocrystals ; dislocation free ; high-pure
Zusammenfassung	We report on the growth of 99,9% enriched ²⁸Si, dislocation free monocrystals (111 - and 100-orientated) with nearly 10 g weight and less than 10¹⁵ foreign atoms/cm³.

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Bulanov, A. D., Devyatych, G. G., Gusev, A. V., Sennikov, P. G., Pohl, H.-J., Riemann, H., Schilling, H., & Becker, P. (2000). The highly isotopic enriched (99,9 %), high-pure ²⁸Si single crystal. Crystal Research and Technology, 35(9), 1023–1026.

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