A very low-noise single-electron electrometer of stacked-junction geometry

Krupenin, V. A.; Presnov, D. E.; Zorin, Alexander B.; Niemeyer, Jürgen

doi:https://doi.org/10.1016/s0921-4526(99)02990-7

Zugriffsnummer	12852
Dokumenttyp	Zeitschriftenartikel
Sprache	Englisch
Titel	A very low-noise single-electron electrometer of stacked-junction geometry
Autor(in); Institution	Krupenin, V. A.; Laboratory of Cryoelectronics, Moscow State University, RUSSIAN FEDERATION Presnov, D. E.; Laboratory of Cryoelectronics, Moscow State University, RUSSIAN FEDERATION Zorin, Alexander B.; 2.42, Metallische Strukturen, PTB-Braunschweig Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
Quelle/Jahr	Physica B: 284-288 (2000), 1800 - 1801
ISSN	0921-4526
DOI	https://doi.org/10.1016/s0921-4526(99)02990-7
Freie Schlagworte	single electron tunneling ; charge noise
Zusammenfassung	An Al single-electron electrometer of stacked design was studied. The manufacturing technique chosen ensured that there was no direct contact between the transistor island and dielectric substrate. The noise figure of the transistor was found to be exceptionally low: Q_x = (8 ± 2)·10^-6 e/Hz^1/2 at 10 Hz.

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Krupenin, V. A., Presnov, D. E., Zorin, A. B., & Niemeyer, J. (2000). A very low-noise single-electron electrometer of stacked-junction geometry. Physica B, 284-288, 1800–1801. https://doi.org/10.1016/s0921-4526(99)02990-7

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