| Zugriffsnummer | 12792 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Growth and characterization of InAs quantum dots on silicon |
| Autor(in); Institution |
Hansen, L.; Universität Würzburg, Physikalisches Institut EP III, Würzburg, GERMANY
Ankudinov, A.; Ioffe Institute, St. Petersburg, RUSSIA
Bensing, F.; Universität Würzburg, Physikalisches Institut EP III, Würzburg, GERMANY
Wagner, J.; Universität Würzburg, Physikalisches Institut EP III, Würzburg, GERMANY
Ade, George; 2.404, Elektronenstrahlmikroskopie und -lithographie, PTB-Braunschweig
Hinze, Peter; 2.404, Elektronenstrahlmikroskopie und -lithographie, PTB-Braunschweig
Wagner, V.; Universität Würzburg, Physikalisches Institut EP III, Würzburg, GERMANY
Geurts, J.; Universität Würzburg, Physikalisches Institut EP III, Würzburg, GERMANY
Waag, A.; Universität Ulm, Abteilung Halbleiterphysik, Ulm, GERMANY
|
| Quelle/Jahr | Self-organized processes in semiconductor alloys:(2000), 33 - 38 |
| Schriftenreihe | Materials Research Society symposium proceedings: 583 |
| Herausgeber(in) |
Mascarenhas, Angelo
|
| ISBN | 1-55899-491-2 |
| Verlag | Warrendale, Pa.: Materials Research Society |
| Konferenzangaben | MRS Fall Meeting, Boston, Mass., 29, November - 02, December, 1999, USA |
| Zusammenfassung | Up to 1011 cm-2 InAs quantum dots (QDs) can be grown on Si(001) by molecular beam epitaxy. This very new material system is, on the one hand, interesting with regard to the integration of optoelectroniics with silicon technology, on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM, and Raman studies about (in-)coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behaviour of a strained adlayer. |
