| Zugriffsnummer | 12503 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | All-chromium single-electron tunneling devices fabricated by direct-writing multilayer technique [poster] |
| Autor(in); Institution |
Scherer, Hansjörg; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Weimann, Thomas; 2.404, Elektronenstrahlmikroskopie und -lithographie, PTB-Braunschweig
Hinze, Peter; 2.404, Elektronenstrahlmikroskopie und -lithographie, PTB-Braunschweig
Samwer, Ben W.; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Zorin, Alexander B.; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Proceedings of the 22nd International Conference on Low Temperature Physics. Physica B: 284/288 (2000), 1806 - 1807 |
| ISSN | 0921-4526 |
| Verlag | Amsterdam: Elsevier Science B.V. |
| Konferenzangaben | 22nd International Conference on Low Temperature Physics, LT22, Helsinki, 04-11, August, 1999, Finland |
| Freie Schlagworte | single electron devices ; nanometer-scale fabrication technology ; Coulomb blockade ; tunneling |
| Zusammenfassung | We present a multilayer technique for the direct-writing fabrication of single electron tunneling (SET) devices based on Cr/CrOx/Cr tunnel junctions. The junction properties are analyzed, and we demonstrate the benefit of our method by the fabrication and characterization of SET transistors with junction sizes ranging between At ≈ 0.001 and 0.025 μm² The samples were prepared by different e-beam lithography (EBL) methods, i.e. either by "conventional" EBL or by the mix-and-match combination with e-beam exposure using a scanning transmission electron microscope (STEM) on Si3N4 membrane substrate. |
