| Zugriffsnummer | 12486 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Fabrication of metallic multilayer single electron tunneling devices using low-energy e-beam lithography |
| Autor(in); Institution |
Weimann, Thomas; 2.404, Elektronenstrahlmikroskopie und -lithographie, PTB-Braunschweig
Scherer, Hansjörg; 2.42, Metallische Strukturen, PTB-Braunschweig
Hinze, Peter; 2.404, Elektronenstrahlmikroskopie und -lithographie, PTB-Braunschweig
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Microelectronic Engineering: 53 (2000), 225 - 228 |
| ISSN | 0167-9317 |
| Verlag | Amsterdam [u.a.]: Elsevier Science |
| Konferenzangaben | Micro- and Nano-Engineering 1999, Rome, 21-23, September, 1999, Italy |
| Freie Schlagworte | single electron tunneling ; nanoscale device ; e-beam lithography |
| Zusammenfassung | In this paper we present a newly developed multilayer technique for the fabrication of single electron tunneling (SET) devices, which is based on low-energy e-beam lithography. The separate functional layers of the SET devices are formed in individual lithography steps. This lithography allows a three-dimensional resist mask to be formed, which can be transferred onto the substrate by a lift-off or etching process. Several SET transistors have been fabricated by this method, which differ in the chosen material and show clear SET effects. |
