| Zugriffsnummer | 12013 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Fabrication of quantum Hall devices for low magnetic fields |
| Autor(in); Institution |
Pierz, Klaus; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Schumacher, Bernd; 2.12, Gleichstromgrößen, PTB-Braunschweig
|
| Quelle/Jahr | IEEE Transactions on Instrumentation and Measurement: 48 (1999), 2, 293 - 295 |
| ISSN | 0018-9456 |
| Verlag | New York, NY: IEEE |
| Konferenzangaben | Conference on Precision Electromagnetic Measurements, CPEM, Washington, DC, 06-10, July, 1998, USA |
| Freie Schlagworte | Hall effect ; quantum effect semiconductor devices ; resistance measurements ; semiconductor device fabrication ; semiconductor epitaxial layers ; semiconductor heterojunctions |
| Zusammenfassung | The quantized Hall resistance of a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures is used for the realization of the unit of resistance. This effect is more and more widely used. For possible application even in magnets with magnetic flux densities as low as 6 T, such devices have been produced with carrier concentrations in range from 2.7 × 1015 m-2 to 5.4 × 1015 m-2 and their metrological quality has been checked. We find that even in low magnetic fields the quantized Hall resistance can be reproduced with highest accuracy. |
| Rechteinformation | 1999, IEEE |