| Zugriffsnummer | 11994 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Shadow evaporation method for fabrication of sub 10 nm gaps between metal electrodes |
| Autor(in); Institution |
Philipp, Günther; Max-Planck-Institut für Festkörperforschung, Stuttgart, GERMANY
Weimann, Thomas; 2.404, Elektronenmikroskopie und -lithographie, PTB-Braunschweig
Hinze, Peter; 2.404, Elektronenmikroskopie und -lithographie, PTB-Braunschweig
Burghard, M.; Max-Planck-Institut für Festkörperforschung, Stuttgart, GERMANY
Weis, Jürgen; Max-Planck-Institut für Festkörperforschung, Stuttgart, GERMANY
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| Quelle/Jahr | Microelectronic Engineering: 46 (1999), 1-4, 157 - 160 |
| ISSN | 0167-9317 |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | single electron devices ; nanometer-scale fabrication technology ; Coulomb blockade ; tunneling |
| Zusammenfassung | Ultrasmall gaps are forming in the crossing region of two perpendicular metal strips during the evaporation of the second strip provided the second layer is thinner the first layer. This due to the shadow cast by the first strip during the evaporation of the second. By changing the angle of evaporation of the second strip the size of the gaps can be tuned in the range from 3 nm to 10 nm. Structural characterisation of gaps in that region requires high resolution transmission electron microscopy (TEM). Therefor these electrode structures are prepared on ultrathin (thickness 20 nm) electron transparent silicon nitride membranes. Ligand stabilised gold clusters (core size 1.5 nm) are attached to these electrode structures using a mercato-polymer. TEM characterisation of these cluster array in the ultrasmall gap allows to relate the number and position of the cluster in the gap region to future transport measurements. |
| Rechteinformation | 1999, Elsevier |