| Zugriffsnummer | 11985 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Novel method for fabricating deep submicron Nb/AlOx/Nb tunnel junctions based on spin-on glass planarization |
| Autor(in); Institution |
Pavolotsky, Alexey B.; 2.401, Einzelelektronentunneln, PTB-Braunschweig; Moscow State University, Cryoelectronics Laboratory, Moscow, RUSSIA
Weimann, Thomas; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Scherer, Hansjörg; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
Zorin, Alexander B.; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Krupenin, Vladimir A.; Moscow State University, Cryoelectronics Laboratory, Moscow, RUSSIA
|
| Quelle/Jahr | IEEE Transactions on Applied Superconductivity: 9 (1999), 2, 3251 - 3254 |
| ISSN | 1051-8223 |
| Verlag | New York, NY: IEEE |
| Zusammenfassung | A novel method for the fabrication of sub-1μm Nb/AlOx/Nb tunnel junctions has been developed, which is based on spin-on glass planarization. The Nb/AlOx/Nb sandwich and the Nb wiring layer are structured by reactive ion etching using e-beam lithography. The insulation between the base electrode and the wiring layer is realized by planarized spin-on glass. Single electron transistors with junction areas of of 0.3 μm × by 0.3 μm and linear arrays of junctions with sizes down to 0.5 μm by 0.5 μm have been fabricated and measured. |
| Rechteinformation | 1999, IEEE |
Zitierung
Pavolotsky, A. B., Weimann, T., Scherer, H., Niemeyer, J., Zorin, A. B., & Krupenin, V. A. (1999). Novel method for fabricating deep submicron Nb/AlOx/Nb tunnel junctions based on spin-on glass planarization. IEEE Transactions on Applied Superconductivity, 9(2), 3251–3254.