Zugriffsnummer 11782
Dokumenttyp Konferenzartikel
Sprache Englisch
Titel Comparison of linewidth measurements on Si structures performed by Atomic Force Microscopy (AFM) and low Voltage Scanning Electron Microscopy (SEM)
Autor(in); Institution
Mirandé, Werner; 4.22, Bildanalyse, PTB-Braunschweig
Frase, Carl Georg; 5.11, Maskenmesstechnik, PTB-Braunschweig
Quelle/Jahr Proceedings of the 3rd Seminar on Quantitative Microscopy : geometrical measurements in the micro- and nanometre range with far and near field methods:(1998), 89 - 96
Schriftenreihe PTB-Bericht PTB-F-34
Herausgeber(in)
Hasche, Klaus; 5, Fertigungsmesstechnik, PTB-Braunschweig
Mirandé, Werner; 4.22, Bildanalyse, PTB-Braunschweig
Wilkening, Günter; 5.1, Mikrometrologie, PTB-Braunschweig
ISSN 0179-0609
ISBN 3-89701-280-4
Berichtsnummer PTB-F-34
Verlag Bremerhaven: Wirtschaftsverl. NW
Konferenzangaben 3rd Seminar on Quantitative Microscopy, Geometrical measurements in the micro- and nanometre range with far and near fields methods, Lyngby, 05-06, November, 1998, Denmark
Zusammenfassung Measurements of the top widths of anisotropically etched Si lines have been performed by means of PTB's SEM based metrological system (EOMS) and a special AFM system (VERITECT3). Good agreement of the measurements resulted from the evaluation of the SEM images by suitable theoretical models based on Monte Carlo Simulation and by using adequate methods for characterising the probe tips in atomic force microscopy.
Rechteinformation 1998, Physikalisch-Technische Bundesanstalt

Zitierung

Mirandé, W. & Frase, C. G. (1998). Comparison of linewidth measurements on Si structures performed by Atomic Force Microscopy (AFM) and low Voltage Scanning Electron Microscopy (SEM). 3rd Seminar on Quantitative Microscopy, Geometrical measurements in the micro- and nanometre range with far and near fields methods, Lyngby, 05-06, November, 1998, Denmark.

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