| Zugriffsnummer | 11652 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM) |
| Autor(in); Institution |
Dziomba, Thorsten; 5.12, Mikrotopographie, PTB-Braunschweig
Sulzbach, Thomas; Nanosensors Dr. Olaf Wolter GmbH, Wetzlar, GERMANY
Ohlsson, Olaf; Nanosensors Dr. Olaf Wolter GmbH, Wetzlar, GERMANY
Lehrer, Christoph; Fraunhofer Institut (IIS-B), Erlangen, GERMANY
Frey, Lothar; Fraunhofer Institut (IIS-B), Erlangen, GERMANY
Danzebrink, Hans-Ulrich; 5.12, Mikrotopographie, PTB-Braunschweig
|
| Quelle/Jahr | Surface and Interface Analysis: 27 (1999), 486 - 490 |
| ISSN | 0142-2421 |
| Verlag | Chichester: Wiley |
| Freie Schlagworte | scanning near-field optical microscopy (SNOM) ; atomic force microscopy (AFM) ; focused ion beam technique (FIB) ; internal reflection mode ; cross-polarized detection |
| Zusammenfassung | We present aperture probes based on non-contact silicon AFM cantilevers for simultaneous AFM and near-infrared SNOM. For use in high-resolution near-field optical microscopy, conventional AFM cantilevers are modified by covering their tip side with an aluminium layer to obtain an opaque coating. To fabricate an aperture, this metal layer is opened at the very end of the polyeder-shaped probe using focused ion beams (FIB), thus allowing apertures of less than 200 nm in diameter to be created. We describe our concept and investigate the characteristics of these probes by discussing images in transmission and cross-polarized internal reflection mode. Apart from probe characterization our attention is devoted, on the one hand, to the dependence of both signal amplitude and resolution on the tip-to-sample distance and, on the other hand, to polarization effects observed in the course of these investigations. To exclude artefacts induced by distance control, the measurements analyzed here are performed in constant-height mode. |
| Rechteinformation | 1999, Wiley |
Zitierung
Dziomba, T., Sulzbach, T., Ohlsson, O., Lehrer, C., Frey, L., & Danzebrink, H.-U. (1999). Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM). Surface and Interface Analysis, 27, 486–490.