| Zugriffsnummer | 11415 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Reflectivity of Mo/Si multilayer systems for EUVL |
| Autor(in); Institution |
Louis, E.; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Yakshin, AE; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Görts, PC; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Abdali, S.; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Maas, ELG; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Stuik, R.; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Bijkerk, F.; FOM-Institute for Plasma Physics Rijnhuizen, Nieuwegein, THE NETHERLANDS
Schmitz, Detlef; 7.12, Röntgenradiometrie, PTB-Berlin
Scholze, Frank; 7.12, Röntgenradiometrie, PTB-Berlin
Ulm, Gerhard; 7.1, Photonenradiometrie, PTB-Berlin
Haidl, M.; Carl Zeiss, Oberkochen, GERMANY
|
| Quelle/Jahr | Emerging Lithographic Technologies III:(1999), 844 - 845 |
| Schriftenreihe | Proceedings of SPIE: 3676 |
| Herausgeber(in) |
Vladimirsky
|
| ISBN | 0-8194-3150-8 |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Conference on Emerging Lithographic Technologies III, Santa Clara, California, 15-17, March, 1999, USA |
| Freie Schlagworte | Mo/Si multilayer coatings ; normal-incidence reflectivity ; electron-beam deposition ; EUVL |
| Zusammenfassung | Normal- incidence reflectivity data of Mo/Si multilayer systems are being reported for the Extreme UV wavelength range. |
| Rechteinformation | 1999, SPIE |
Zitierung
Louis, E., Yakshin, A., Görts, P., Abdali, S., Maas, E., Stuik, R., Bijkerk, F., Schmitz, D., Scholze, F., Ulm, G., & Haidl, M. (1999). Reflectivity of Mo/Si multilayer systems for EUVL. SPIE Conference on Emerging Lithographic Technologies III, Santa Clara, California, 15-17, March, 1999, USA.