| Zugriffsnummer | 11409 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Characterization of photodiodes as transfer detector standards in the 120 nm to 600 nm spectral range |
| Autor(in); Institution |
Kuschnerus, Peter; 7.11, UV- und VUV-Radiometrie, PTB-Berlin
Rabus, Hans; 7.11, UV- und VUV-Radiometrie, PTB-Berlin
Richter, Mathias; 7.11, UV- und VUV-Radiometrie, PTB-Berlin
Scholze, Frank; 7.12, Röntgenradiometrie, PTB-Berlin
Werner, Lutz; 7.22, Hochtemperaturmetrologie, PTB-Berlin
Ulm, Gerhard; 7.1, Photonenradiometrie, PTB-Berlin
|
| Quelle/Jahr | Metrologia: 35 (1998), 4, 355 - 362 |
| ISSN | 0026-1394 |
| DOI | |
| Klassifikationscode | PACS: 85.60.Dw ; PACS: 07.85.Qe ; PACS: 06.20.F- ; PACS: 61.80.Ba ; PACS: 07.20.Mc |
| Zusammenfassung | Using spectrally dispersed synchrotron radiation of continuously tuneable wavelength as delivered by the ultraviolet (UV) and vacuum ultraviolet (VUV) calibration facility of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY 1 in Berlin, various types of silicon photodiode have been examined for their radiometric performance in the 120 nm to 600 nm spectral range. Their absolute spectral responsivity was determined with a typical relative uncertainty of 0.7 % using the synchrotron-radiation cryogenic electrical-substitution radiometer, SYRES, as primary detector standard. Particular emphasis has been given to the study of radiation-damage effects at wavelengths below 250 nm. In addition, the reflectance of the photodiodes was measured to determine their internal quantum efficiency. Using a physical model for the internal losses, the mean energy to create an electron-hole pair in silicon was derived. |
| Rechteinformation | 1999, BIPM |