| Zugriffsnummer | 11289 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Strongly asymmetric SET transistor as zero-biased electrometer |
| Autor(in); Institution |
Krupenin, V. A.; Moscow State University, Moscow, RUSSIA
Presnov, D. E.; Moscow State University, Moscow, RUSSIA
Zalunin, V. O.; Moscow State University, Moscow, RUSSIA
Vasenko, S. A.; Moscow State University, Moscow, RUSSIA
Zorin, Alexander B.; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Nanostructures : physics and technology ; 12th international symposium, St. Petersburg, Russia, June 21 - 25, 2004 ; proceedings:(2004), 352 - 353 |
| Herausgeber(in) |
Alferov, Zh.
|
| ISBN | 5-93634-015-5 |
| Verlag | St. Petersburg: Ioffe Institute |
| Konferenzangaben | 12th International Symposium on Nanostructures: Physics and Technology, St.-Petersburg, 21-25, June, 2004, Russia |
| Freie Schlagworte | Single electronics ; Noise rectification |
| Zusammenfassung | We have studied a strongly asymmetric Al single electron transistor (R1 ≤ R2 and C1 ≥ C2, where R1,2 and C1,2 are the tunnel resistances and capacitances of the first and second junction respectively). Due to asymmetry in its electric parameters, leading to strong asymmetry of the I-V curve at zero bias (V=0), the transistor demonstrated remarkable current response to ac signal at the values of gate charge Qo close to (η + 1/2)e, where η is integer. The measured curves are in a good agreement with a fit made in the frame of the orthodox theory of single electron tunneling. The strongly asymmetric SET transistors can be used as sensitive noise detectors and electrometers operating in the regime of zero dc voltage bias. |
