| Zugriffsnummer | 11201 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Critical review of the current status of thickness measurements for ultrathin SiO2 on Si : part V: Results of a CCQM pilot study |
| Autor(in); Institution |
Seah, M. P.; National Physical Laboratory, Centre for Optical and Analytical Measurement, Teddington, Middlesex, UK
Spencer, S. J.; National Physical Laboratory, Centre for Optical and Analytical Measurement, Teddington, Middlesex, UK
Bensebaa, F.; National Research Council of Canada, ICEPET, Nanostructured Material Group, Ottawa, CANADA
Vickridge, I.; Université de Paris 6/7, Groupe de Physique des Solides, Paris Cedex, FRANCE
Danzebrink, Hans-Ulrich; 5.1, Nano- und Mikrometrologie, PTB-Braunschweig
Krumrey, Michael; 7.1, Photonenradiometrie, PTB-Berlin
Gross, T.; Bundesanstalt für Materialforschung und -prüfung (BAM), Labor VIII.23, Berlin, GERMANY
Oesterle, W.; Bundesanstalt für Materialforschung und -prüfung (BAM), Berlin, GERMANY
Wendler, E.; Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena, GERMANY
Rheinländer, B.; Universität Leipzig, Fakultät für Physik und Geowissenschaften, Abteilung Halbleiterphysik, Institut für Experimentelle Physik II, Leipzig, GERMANY
Azuma, Y.; National Metrology Institute of Japan, (NMIJ), AIST, Materials Characterization Division, Tsukuba, JAPAN
Kojima, I.; National Metrology Institute of Japan, (NMIJ), AIST, Materials Characterization Division, Tsukuba, JAPAN
Suzuki, N.; Utsonomiya University, Utsonomiya, JAPAN
Suzuki, M.; Center for Metrials Analysis Technology, NTT Advanced Technology Corporation, Kanagawa, JAPAN
Tanuma, S.; National Institute for Materials Science, Materials Physics Group, Tsukuba, JAPAN
Moon, D. W.; Korea Research Institute of Standards and Science, Nano Surface Group, Materials Evaluation Center, Taejon, REPUBLIC OF KOREA
Lee, H. J.; Korea Research Institute of Standards and Science, Materials Evaluation Center, Taejon, REPUBLIC OF KOREA
Cho, Hyun Mo; Korea Research Institute of Standards and Science, Optical Metrology, Photometry and Imaging Optics, Taejon, REPUBLIC OF KOREA
Chen, H. Y.; PSB Corporation, Singapore, SINGAPORE
Wee, A. T. S.; National University of Singapore, Faculty of Science, Surface Science Laboratory, Depertment of Physics, Singapore, SINGAPORE
Osipowicz, T.; National University of Singapore, Department of Physics, Centre for Ion Beam Applications, Singapore, SINGAPORE
Pan, J. S.; Institute of Materials Research & Engineering, Materials Science and Characterization Laboratory, Singapore, SINGAPORE
Jordaan, W. A.; CSIR-National Metrology Laboratory, Surface and Microanalysis, Pretoria, SOUTH AFRICA
Hauert, R.; Swiss Federal Laboratories for Materials Testing and Research (EMPA), Dübendorf, SWITZERLAND
Klotz, U.; Swiss Federal Laboratories for Materials Testing and Research (EMPA), Dübendorf, SWITZERLAND
Marel, C. van der; Philips Centre for Industrial Technology, WY42, Eindhoven, THE NETHERLANDS
Verheijen, M.; Philips Centre for Industrial Technology, WY42, Eindhoven, THE NETHERLANDS
Tamminga, Y.; Philips Centre for Industrial Technology, WAM 01, Eindhoven, THE NETHERLANDS
Jeynes, C.; University of Surrey Ion Beam Centre, The Nodus Laboratory, Guildford, UK
Bailey, P.; CLRC Daresbury Laboratory, Daresbury, Warrington, UK
Biswas, S.; Cascade Scientific Ltd, Uxbridge, Middlesex, UK
Falke, U.; SuperSTEM Laboratory, CLRC Daresbury, Cheshire, UK
Nguyen, N. V.; National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, USA
Chandler-Horowitz, D.; National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, USA
Ehrstein, J. R.; National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, USA
Muller, D.; Applied and Engineering Physics, Ithaka, USA; Bell Labs, Lucent Technologies, Murray Hill, USA, formerly
Dura, J. A.; National Institute of Standards and Technology (NIST), Center for Neutron Research, Gaithersburg, USA
|
| Quelle/Jahr | Surface and interface analysis: 36 (2004), 9, 1269 - 1303 |
| ISSN | 0142-2421 |
| DOI | |
| Verlag | Chichester [u.a.]: Wiley |
| Freie Schlagworte | calibration ; ellipsometry ; gate oxides ; GIXRR ; interlaboratory study ; MEIS ; neutron reflectometry ; NRA ; RBS ; silicon dioxide ; SIMS ; TEM ; thickness measurement ; traceability ; XPS |
| Zusammenfassung | Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements of and resolve any relevant measurement issues in the amount of thermal oxide on (100) and (111) orientation silicon wafer substrates in the thickness range 1.5-8 nm. As a result of the invitation to participate in this activity, 45 sets of measurements have been made in different laboratories using 10 analytical methods: medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), XPS, SIMS, ellipsometry, grazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM). The measurements are made on separate sets of 10 carefully prepared samples, all of which have been characterized by a combination of ellipsometry and XPS using carefully established reference conditions and reference parameters. The results have been assessed against the National Physical Laboratory (NPL) data and all show excellent linearity. The data sets correlate with the NPL data with average root-mean-square scatters of 0.15 nm, half being better than 0.1 nm and a few at or better than 0.05nm. Each set of data allows a relative scaling constant and a zero thickness offset to be determined. Each method has an inherent zero thickness offset between 0 nm and 1 nm and it is these offsets, measured here for the first time, that have caused many problems in the past. There are three basic classes of offset: water and carbonaceous contamination equivalent to ˜1 nm as seen by ellipsometry; adsorbed oxygen mainly from water at an equivalent thickness of 0.5 nm as seen by MEIS, NRA, RBS and possibly GIXRR; and no offset as seen by XPS using the Si 2p peaks. Each technique has a different uncertainty for the scaling constant and consistent results have been achieved. X-ray photoelectron spectroscopy has large uncertainties for the scaling constant but a high precision and critically, if used correctly, has zero offset. Thus, a combination of XPS and the other methods allows the XPS scaling constant to be determined with low uncertainty, traceable via the other methods. The XPS laboratories returning results early were invited to test a new reference procedure. All showed very significant improvements. The reference attenuation lengths thus need scaling by 0.986 ± 0.009 (at an expansion factor of 2), deduced from the data for the other methods. Several other methods have small offsets and, to the extent that these can be shown to be constant or measurable, these methodswill also show low uncertainty. Recommendations are provided for parameters for XPS, MEIS, RBS and NRA to improve their accuracy. |
Zitierung
Seah, M. P., Spencer, S. J., Bensebaa, F., Vickridge, I., Danzebrink, H.-U., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D. W., Lee, H. J., Cho, H. M., Chen, H. Y., Wee, A. T. S., Osipowicz, T., Pan, J. S., Jordaan, W. A., Hauert, R., Klotz, U., Marel, C. V. D., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N. V., Chandler-Horowitz, D., Ehrstein, J. R., Muller, D., & Dura, J. A. (2004). Critical review of the current status of thickness measurements for ultrathin SiO2 on Si : part V: Results of a CCQM pilot study. Surface and interface analysis, 36(9), 1269–1303. https://doi.org/10.1002/sia.1909